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document number: 85824 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.9, 08-jun-10 1 two-line esd-protection in sot-23 gsot03c to gsot36c vishay semiconductors marking (example only) yyy = type code (see table below) xx = date code features ? two-line esd-protection device ? esd-protection acc. iec 61000-4-2 30 kv contact discharge 30 kv air discharge ? space saving sot-23 package ? aec-q101 qualified ?e3 - sn ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20456 2 3 1 20512 1 20357 yyy xx xx ordering information device name environmental status ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity gsot03c standard gsot03c-gs08 3000 15 000 green gsot03c-g-08 gsot04c standard gsot04c-gs08 3000 15 000 green gsot04c-g-08 gsot05c standard gsot05c-gs08 3000 15 000 green gsot05c-g-08 gsot08c standard gsot08c-gs08 3000 15 000 green gsot08c-g-08 gsot12c standard gsot12c-gs08 3000 15 000 green GSOT12C-G-08 gsot15c standard gsot15c-gs08 3000 15 000 green gsot15c-g-08 gsot24c standard gsot24c-gs08 3000 15 000 green gsot24c-g-08 gsot36c standard gsot36c-gs08 3000 15 000 green gsot36c-g-08 ** please see document vishay material category policy: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85824 2 rev. 1.9, 08-jun-10 gsot03c to gsot36c vishay semiconductors two-line esd-protection in sot-23 package data device name package name type code environmental status weight molding compound flammability rating moisture sensitivity level soldering conditions gsot03c sot-23 03c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c1g green 8.1 mg gsot04c sot-23 04c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c8g green 8.1 mg gsot05c sot-23 05c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c2c green 8.1 mg gsot08c sot-23 08c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c3g green 8.1 mg gsot12c sot-23 12c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c4g green 8.1 mg gsot15c sot-23 15c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c5g green 8.1 mg gsot24c sot-23 24c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c6g green 8.1 mg gsot36c sot-23 36c standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals c7g green 8.1 mg absolute maximum ratings gsot03c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 30 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 369 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 504 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot04c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 30 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 429 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 564 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
document number: 85824 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.9, 08-jun-10 3 gsot03c to gsot36c two-line esd-protection in sot-23 vishay semiconductors absolute maximum ratings gsot05c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 30 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 30 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 480 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 612 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot08c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 18 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 18 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 345 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 400 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot12c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 12 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 12 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 312 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 337 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85824 4 rev. 1.9, 08-jun-10 gsot03c to gsot36c vishay semiconductors two-line esd-protection in sot-23 bias-mode (2-line bidirectional asymme trical protection mode) with the gsotxx one signal- or data-lines (l1) can be prote cted against voltage transients. with pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. as long as the voltage level on the data- or signal-li ne is between 0 v (ground level) and the spec ified maximum reverse working voltage (v rwm ) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. the protection device behaves like an open switch. as soon as any positive transient voltage signal exceeds the break through voltage level of th e protection diode, the diode becomes conductive and shorts the transien t current to ground. now the protection de vice behaves like a closed switch. the clamping voltage (v c ) is defined by the br eakthrough voltage (v br ) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. any negative transient signal w ill be clamped accordingly. the negative transien t current is flowing in the forward direction o f the protection diode. the low forward voltage (v f ) clamps the negative transient close to the ground level. due to the different clamping levels in forward and reverse direction the gsotxx clamping behaviour is bidirectional and asymmetrical (bias). absolute maximum ratings gsot15c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 8a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 8a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 345 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 400 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot24c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 5a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 5a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 235 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 240 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gsot36c parameter test conditions symbol value unit peak pulse current pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot i ppm 3.5 a pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 3.5 a peak pulse power pin 1 to 3 or pin 2 to 3 acc. iec 61000-4-5, t p = 8/20 s; single shot p pp 248 w pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. iec 61000-4-5, t p = 8/20 s; single shot 252 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 30 kv air discharge acc. iec 61000-4-2; 10 pulses 30 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c
document number: 85824 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.9, 08-jun-10 5 gsot03c to gsot36c two-line esd-protection in sot-23 vishay semiconductors if a higher surge current or peak pulse current (i pp ) is needed, both protection diodes in the gsotxxc can also be used in parallel in order to dou ble the performance. this offers: ? double surge power = double peak pulse current (2 x i ppm ) ? half of the line inductance = reduced clamping voltage ? half of the line resistance = reduced clamping voltage ? double line capacitance (2 x c d ) ? double reverse leakage current (2 x i r ) note ? ratings at 25 c, ambient temperature unless otherwise sp ecified. bias mode (between pin 1 to 3 or pin 2 to 3) note ? ratings at 25 c, ambient temperature unless otherwise sp ecified. bias mode (between pin 1 to 3 or pin 2 to 3) l1 l2 20358 2 1 3 g round bias l1 20359 2 1 3 g round electrical characteristics gsot03c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 100 a v rwm 3.3 - - v reverse current at v r = 3.3 v i r - - 100 a reverse breakdown voltage at i r = 1 ma v br 44.6- v reverse clamping voltage at i pp = 1 a v c -5.77.5v at i pp = i ppm = 30 a - 10 12.3 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 30 a - 4.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 420 600 pf at v r = 1.6 v; f = 1 mhz - 260 - pf electrical characteristics gsot04c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 20 a v rwm 4--v reverse current at v r = 4 v i r - - 20 a reverse breakdown voltage at i r = 1 ma v br 56.1- v reverse clamping voltage at i pp = 1 a v c -7.59 v at i pp = i ppm = 30 a - 11.2 14.3 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 30 a - 4.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 310 450 pf at v r = 2 v; f = 1 mhz - 200 - pf
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85824 6 rev. 1.9, 08-jun-10 gsot03c to gsot36c vishay semiconductors two-line esd-protection in sot-23 note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 3 or pin 2 to 3) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 3 or pin 2 to 3) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 3 or pin 2 to 3) electrical characteristics gsot05c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 10 a v rwm 5--v reverse current at v r = 5 v i r --10a reverse breakdown voltage at i r = 1 ma v br 66.8- v reverse clamping voltage at i pp = 1 a v c -78.7v at i pp = i ppm = 30 a - 12 16 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 30 a - 4.5 - v capacitance at v r = 0 v; f = 1 mhz c d - 260 350 pf at v r = 2.5 v; f = 1 mhz - 150 - pf electrical characteristics gsot08c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 5 a v rwm 8--v reverse current at v r = 8 v i r --5a reverse breakdown voltage at i r = 1 ma v br 910- v reverse clamping voltage at i pp = 1 a v c - 10.7 13 v at i pp = i ppm = 18 a - 15.2 19.2 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 18 a - 3 - v capacitance at v r = 0 v; f = 1 mhz c d - 160 250 pf at v r = 4 v; f = 1 mhz - 80 - pf electrical characteristics gsot12c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 1 a v rwm 12 - - v reverse current at v r = 12 v i r --1a reverse breakdown voltage at i r = 1 ma v br 13.5 15 - v reverse clamping voltage at i pp = 1 a v c - 15.4 18.7 v at i pp = i ppm = 12 a - 21.2 26 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 12 a - 2.2 - v capacitance at v r = 0 v; f = 1 mhz c d - 115 150 pf at v r = 6 v; f = 1 mhz - 50 - pf
document number: 85824 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.9, 08-jun-10 7 gsot03c to gsot36c two-line esd-protection in sot-23 vishay semiconductors note ? ratings at 25 c, ambient temperature unless otherwise sp ecified. bias mode (between pin 1 to 3 or pin 2 to 3) note ? ratings at 25 c, ambient temperature unless otherwise sp ecified. bias mode (between pin 1 to 3 or pin 2 to 3) note ? ratings at 25 c, ambient temperature unless otherwise sp ecified. bias mode (between pin 1 to 3 or pin 2 to 3) bisy-mode (1-line bidirectional symme trical protection mode) if a bipolar symmetrical pro tection device is needed the gsotxxc can also be used as a single line protection device. therefore pin 1 has to be connected to the signal- or data-line (l1) and pin 2 to ground (or vice versa). pin 3 must not be connected. positive and negative voltage transients will be clamped in the same way. the clamping cu rrent through the gsotxxc passes one diode in forward direction an d the other one in reverse dire ction. the clamping voltage (v c ) is defined by the breakthrough voltage (v br ) level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device. due to the same clamping levels in positive and negative dire ction the gsotxxc voltage clamping behaviour is bidirectional and symmetrical (bisy). electrical characteristics gsot15c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 1 a v rwm 15 - - v reverse current at v r = 15 v i r --1a reverse breakdown voltage at i r = 1 ma v br 16.5 18 - v reverse clamping voltage at i pp = 1 a v c - 19.4 23.5 v at i pp = i ppm = 8 a - 24.8 28.8 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 8 a - 1.8 - v capacitance at v r = 0 v; f = 1 mhz c d - 90 120 pf at v r = 7.5 v; f = 1 mhz - 35 - pf electrical characteristics gsot24c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 1 a v rwm 24 - - v reverse current at v r = 24 v i r --1a reverse breakdown voltage at i r = 1 ma v br 27 30 - v reverse clamping voltage at i pp = 1 a v c -3441v at i pp = i ppm = 5 a - 41 47 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 5 a - 1.4 - v capacitance at v r = 0 v; f = 1 mhz c d -6580pf at v r = 12 v; f = 1 mhz - 20 - pf electrical characteristics gsot36c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --2lines reverse working voltage at i r = 1 a v rwm 36 - - v reverse current at v r = 36 v i r --1a reverse breakdown voltage at i r = 1 ma v br 39 43 - v reverse clamping voltage at i pp = 1 a v c -4960v at i pp = i ppm = 3.5 a - 59 71 v forward clamping voltage at i pp = 1 a v f -11.2v at i pp = i ppm = 3.5 a - 1.3 - v capacitance at v r = 0 v; f = 1 mhz c d -5265pf at v r = 18 v; f = 1 mhz - 12 - pf
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85824 8 rev. 1.9, 08-jun-10 gsot03c to gsot36c vishay semiconductors two-line esd-protection in sot-23 note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conn ected) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) l1 20361 2 1 3 g round bi s y electrical characteristics gsot03c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 100 a v rwm 3.8 - - v reverse current at v r = 3.8 v i r --100a reverse breakdown voltage at i r = 1 ma v br 4.5 5.3 - v reverse clamping voltage at i pp = 1 a v c -78.4v at i pp = i ppm = 30 a - 14 16.8 v capacitance at v r = 0 v; f = 1 mhz c d - 210 300 pf at v r = 1.6 v; f = 1 mhz - 190 - pf electrical characteristics gsot04c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 20 a v rwm 4.5 - - v reverse current at v r = 4:5 v i r --20a reverse breakdown voltage at i r = 1 ma v br 5.5 6.8 - v reverse clamping voltage at i pp = 1 a v c -7.59 v at i pp = i ppm = 30 a - 15.7 18.8 v capacitance at v r = 0 v; f = 1 mhz c d - 155 225 pf at v r = 2 v; f = 1 mhz - 135 - pf electrical characteristics gsot05c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 10 a v rwm 5.5 - - v reverse current at v r = 5.5 v i r --10a reverse breakdown voltage at i r = 1 ma v br 6.5 7.5 - v reverse clamping voltage at i pp = 1 a v c -8.19.7v at i pp = i ppm = 18 a - 17 20.4 v capacitance at v r = 0 v; f = 1 mhz c d - 130 175 pf at v r = 4 v; f = 1 mhz - 100 - pf
document number: 85824 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.9, 08-jun-10 9 gsot03c to gsot36c two-line esd-protection in sot-23 vishay semiconductors note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) electrical characteristics gsot08c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 5 a v rwm 8.5 - - v reverse current at v r = 8.5 v i r --5a reverse breakdown voltage at i r = 1 ma v br 9.5 10.7 - v reverse clamping voltage at i pp = 1 a v c - 11.7 14 v at i pp = i ppm = 18 a - 18.5 22.2 v capacitance at v r = 0 v; f = 1 mhz c d - 80 125 pf at v r = 4 v; f = 1 mhz - 60 - pf electrical characteristics gsot12c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 12.5 - - v reverse current at v r = 12.5 v i r --1a reverse breakdown voltage at i r = 1 ma v br 13.5 15.7 - v reverse clamping voltage at i pp = 1 a v c - 16.4 19.7 v at i pp = i ppm = 12 a - 23.4 28.1 v capacitance at v r = 0 v; f = 1 mhz c d -5875pf at v r = 7.5 v; f = 1 mhz - 36 - pf electrical characteristics gsot15c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 15.5 - - v reverse current at v r = 15.5 v i r --1a reverse breakdown voltage at i r = 1 ma v br 17 18.7 - v reverse clamping voltage at i pp = 1 a v c - 20.4 24.5 v at i pp = i ppm = 8 a - 26.6 30.6 v capacitance at v r = 0 v; f = 1 mhz c d -4560pf at v r = 7.5 v; f = 1 mhz - 25 - pf electrical characteristics gsot24c parameter test conditions/re marks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 24.5 - - v reverse current at v r = 24.5 v i r --1a reverse breakdown voltage at i r = 1 ma v br 27.5 30.7 - v reverse clamping voltage at i pp = 1 a v c -3441v at i pp = i ppm = 5 a - 40 48 v capacitance at v r = 0 v; f = 1 mhz c d -3340pf at v r = 12 v; f = 1 mhz - 18 - pf
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 85824 10 rev. 1.9, 08-jun-10 gsot03c to gsot36c vishay semiconductors two-line esd-protection in sot-23 note ? ratings at 25 c, ambient temperature unless otherwise specified. bias mode (between pin 1 to 2 or pin 2 to 1; pin 3 not conne cted) package dimensions in millimeters (inches): sot-23 electrical characteristics gsot36c parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse working voltage at i r = 1 a v rwm 36.5 - - v reverse current at v r = 36.5 v i r --1a reverse breakdown voltage at i r = 1 ma v br 39.5 43.7 - v reverse clamping voltage at i pp = 1 a v c -5060v at i pp = i ppm = 3.5 a - 60 72 v capacitance at v r = 0 v; f = 1 mhz c d -2633pf at v r = 18 v; f = 1 mhz - 10 - pf foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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